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InGaAs Quantum Dots Embedded in p-n Junction on GaAs(311)B Substrate

Published online by Cambridge University Press:  17 March 2011

Kouichi Akahane ,
Haizhi Song ,
Yoshitaka Okada  and
Mitsuo Kawabe
Kouichi Akahane
Affiliation:
Institute of Applied PhysicsUniversity of Tsukuba1-1-1 Tennodai, Tsukuba, 305-8573, JAPAN
Haizhi Song
Affiliation:
Institute of Applied PhysicsUniversity of Tsukuba1-1-1 Tennodai, Tsukuba, 305-8573, JAPAN
Yoshitaka Okada
Affiliation:
Institute of Applied PhysicsUniversity of Tsukuba1-1-1 Tennodai, Tsukuba, 305-8573, JAPAN
Mitsuo Kawabe
Affiliation:
Institute of Applied PhysicsUniversity of Tsukuba1-1-1 Tennodai, Tsukuba, 305-8573, JAPAN
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Abstract

We have evaluated the photoluminescence (PL) properties of quantum dots (QDs) embedded in a p-n junction on GaAs(311)B and were compared with the identical structure grown on GaAs(001). The QDs on these two surfaces were fabricated with a similar size and density by optimizing the growth conditions. The PL emission from the QDs grown on GaAs(001) rapidly disappeared when the excitation power was decreased below 0.4W/cm2, while that from on GaAs(311)B was clearly observable even at a lower excitation power of 0.1W/cm2. From the measurements of PL intensity dependence on temperature and applied electric field, it was found that there are clear differences between the QDs grown on (001) and the QDs grown on (311)B in the recombination rates through non-radiative processes and/or the escape rates of carriers out of QDs to the GaAs host through a tunneling process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 642: Symposium J – Semiconductor Quantum Dots II , 2000 , J3.11.1
Copyright
Copyright © Materials Research Society 2001

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References

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