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InGaAs Compositional Control in a Halide-Based Vapor Levitation Epitaxy System

Published online by Cambridge University Press:  28 February 2011

Camellia M. L. Yee  and
Pamela S. Davisson
Camellia M. L. Yee
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
Pamela S. Davisson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
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Abstract

The Vapor Levitation Epitaxy (VLE) system utilizes quartz frits directly in front of the growth surface of the substrate. This impacts on both epitaxial layer thickness uniformity and compositional uniformity. The highly uniform layers achievable with the process have been described.

In this paper we discuss the compositional uniformity of InGaAs epitaxial layers grown by the VLE process. The composition of the InGaAs is shown to vary with time during a growth run and across the wafer when using the same growth conditions as for an open tube halide system. This compositional variation occurs for InGaAs layers exceeding 1.5 μm in thickness. We show that with the proper gas phase composition, InGaAs epitaxial layers in excess of 5.0 μm thick can be grown with excellent compositional uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 91
Copyright
Copyright © Materials Research Society 1989

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