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Infrared Photoelastic Study of Thin-Film-Edge-Induced Stresses in Silicon Substrates

Published online by Cambridge University Press:  21 March 2011

H. J. Peng ,
S.P. Wong  and
Shounan Zhao
H. J. Peng
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
S.P. Wong
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
Shounan Zhao
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
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Abstract

The stress distribution in silicon substrates under a silicon dioxide thin film edge, long oxide thin film stripes and long oxide window structures have been studied using the infrared photoelastic (IRPE) method. The experimental IRPE stress fringe patterns were compared with the simulated patterns based on an analytic solution we obtained recently for the stress distribution under a thin film edge in isotropic substrates. Dependence of the stress distribution in these structures on the geometrical parameters such as the stripe width, window width, and substrate thickness were also studied. The implication of a slight discrepancy between the experimental and simulated IRPE patterns on the singular behavior of stress field in the substrate at the film edge and the concentrated force assumption are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L4.5.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

[1] Hu, S.M., J. Appl. Phys. 70, R53 (1991)Google Scholar
[2] Wolf, I. De, Semicond. Sci. Technol. 11, 139 (1996).Google Scholar
[3] Pinardi, K., Jain, S. C., Willander, M., Atkinson, A., Maes, H. E., Overstraeten, R. Van, J. Appl. Phys. 84, 2507 (1998).Google Scholar
[4] Jain, S.C., Meis, H.E., Pinardi, K., Wolf, I. De, J. Appl. Phys. 79, 8145 (1996).Google Scholar
[5] Steegen, A., Wolf, I. De, Maex, K., J. Appl. Phys. 86, 4290 (1999).Google Scholar
[6] Rho, H., Jackson, H.E., Weiss, B. L., J. Appl. Phys. 90, 276 (2001).Google Scholar
[7] Liu, M., Kim, H.K., Appl. Phys. Lett. 79, 2693 (2001).Google Scholar
[8] Wong, S.P., Peng, H.J. and Zhao, S., Appl. Phys. Lett. 79, 1628 (2001).Google Scholar
[9] Wong, S.P., Peng, H.J. and Zhao, S., Mater. Res. Soc. Symp. Proc. 670, K7.5.1 (2001).Google Scholar
[10] Wong, S.P., Cheung, W.Y., Ke, N., Sajan, M.R., Guo, W.S., Huang, L., Zhao, S., Materials Chemistry and Physics 51, 157 (1997).Google Scholar
[11] Peng, H. J., Wong, S. P., Lau, W. F., Ke, N., Zhao, S., Mater. Res. Soc. Symp. Proc. 563, 303 (1999)Google Scholar
[12] Hu, S.M., Appl. Phys. Lett. 32, 5 (1978).Google Scholar
[13] Kirkby, P.A., Selway, P.R., Westbrook, L. D., J. Appl. Phys. 50, 4567 (1979).Google Scholar