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Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Kai Zhu ,
E. A. Schiff  and
G. Ganguly
Kai Zhu
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244-1130 USA
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244-1130 USA
G. Ganguly
Affiliation:
BP Solar, Toano, VA 23168 USA
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Abstract

We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1% - 5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A5.4
Copyright
Copyright © Materials Research Society 2002

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