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Infrared and Visible Emission from Si Layers

Published online by Cambridge University Press:  15 February 2011

A. Kux ,
P. Lugli ,
R. Ostermeir ,
F. Koch  and
G. Deboy
A. Kux
Affiliation:
Tech.Univ. Munich, Physik-Dept.E16, D-8046 Garching, Germany
P. Lugli
Affiliation:
Dipart. di Ingegneria Elettronica, III Univ. di Roma, Via E. Carnevale, I-00173 Roma, Italy
R. Ostermeir
Affiliation:
Tech.Univ. Munich, Physik-Dept.E16, D-8046 Garching, Germany
F. Koch
Affiliation:
Tech.Univ. Munich, Physik-Dept.E16, D-8046 Garching, Germany
G. Deboy
Affiliation:
Siemens Res. Lab, Otto-Hahn-Ring 6, D-8000 München, Germany
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Abstract

We present an experimental study of light emission in silicon devices, mainly MOSFETs, p-i-n diodes, and MIS structures. The special analysis shows important features below as well as above the gap, indicating the type of mechanism responsible for the light emission. Striking differences we found between planar and vertical-type structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

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References

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