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The Influence of Thermal Treatment on Defect Characteristics in Cz-Silicon Wafers Investigated by Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  03 September 2012

P. Mascher ,
W. Puff ,
S. Hahn ,
K. H. Cno  and
B. Y. Lee
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
W. Puff
Affiliation:
Institut für Kernphysik, Technische Universität Graz, Graz, Austria
S. Hahn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
K. H. Cno
Affiliation:
Siltron Inc., #283 Imsoodong, Gumi Kyungsangbukdo, Korea
B. Y. Lee
Affiliation:
Siltron Inc., #283 Imsoodong, Gumi Kyungsangbukdo, Korea
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Abstract

Positron lifetime and Doppler-broadening experiments as well as Fourier-transform infrared spectroscopy (FTIR) were performed on a variety of six-inch Czochralski (CZ) silicon wafers. Measurements were done at 14 equidistant locations across the wafers which were cut from the seed-, middle-, and tail-sections of two boules grown at different pull-speeds.

In the as-grown wafers, the positron response consisted of components from small oxygen-related clusters and “perfect” bulk silicon only. Possible contributions from vacancy-type defects were at or just below the detection limit. After a two-step heat treatment (750°C/ 4 hrs + 1050°C/6 hrs in N2) FTIR showed that significant amounts of oxygen (4–8 ppma) had precipitated in wafers taken from the seed-sections of the boules but not in any of the other wafers. The positron data did not reflect this distinctive difference, however, both lifetime and Doppler-broadening results strongly indicate the creation of vacancy-type defects at concentrations in the 1016cm−3-range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 665
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Corbett, J. W., Deak, P., Lindström, J. L., Roth, L. M., and Snyder, L. C., Materials Sci. Forum 38–41, 579 (1989) and many references therein.Google Scholar
2. Dannefaer, S., in Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers, Amsterdam, 1990), p. 1561; and several papers at this conference.Google Scholar
3. Mascher, P., Puff, W., Hahn, S., Cho, K. H., and Lee, B. Y., Materials Sci. Forum 83–87, 413 (1992)Google Scholar
4. Kirkegaard, P., Pedersen, N. J., and Eldrup, M., RISO-M-274O, Risø National Laboratory, Roskilde, Denmark (1989)Google Scholar
5. Puff, W., Comput. Phys. Commun. 30, 359 (1983)Google Scholar
6. West, R. N., Adv. Phys. 22, 263 (1973)Google Scholar
7. Dannefaer, S., Phys. Status Solidi A102, 481 (1987)Google Scholar
8. Dannefaer, S. and Kerr, D., J. Appl. Phys. 60, 1313 (1986)Google Scholar
9. Fuhs, W., Holzhauer, U., Mantl, S., Richter, F. W., and Sturm, R., Phys. Status Solidi Boa, 69 (1978)CrossRefGoogle Scholar
10. Dannefaer, S., Mascher, P., and Kerr, D., Phys. Rev. Lett. 56, 2195 (1986)Google Scholar
11. Mäkinen, J., Corbel, C., Hautojärvi, P., Moser, P., and Pierre, F., Phys. Rev. B39, 10162 (1989)Google Scholar
12. Dannefaer, S., Puff, W., Mascher, P., and Kerr, D., J. Appl. Phys. 66, 3526 (1989)Google Scholar
13. Mascher, P., Dannefaer, S., and Kerr, D., Phys. Rev. B40, 11764 (1989)Google Scholar