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Influence of the Structural Properties of Microcrystalline Silicon on the Performance of High Mobility Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Kah Yoong Chan ,
Dietmar Knipp ,
Reinhard Carius  and
Helmut Stiebig
Kah Yoong Chan
Affiliation:
[email protected], Research Center Juelich, IEF5-Photovoltaics, Juelich, Juelich, 52425, Germany
Dietmar Knipp
Affiliation:
[email protected], Jacobs University Bremen, School of Engineering and Science, Bremen, 28759, Germany
Reinhard Carius
Affiliation:
[email protected], Research Center Juelich, IEF5-Photovoltaics, Juelich, 52425, Germany
Helmut Stiebig
Affiliation:
[email protected], Research Center Juelich, IEF5-Photovoltaics, Juelich, 52425, Germany
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Abstract

The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.

Keywords

thin filmSidevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A12-02
Copyright
Copyright © Materials Research Society 2008

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References

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