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Influence of the Sol-Gel Synthesis Conditions on the Properties of Thin PbTiO3 Films

Published online by Cambridge University Press:  15 February 2011

P.J. Retuert ,
T.P. Velilla ,
V. Del C. Martin  and
R.E. Avila
P.J. Retuert
Affiliation:
Depto. de Química, Facultad de Ciencias Fís. y Mat., Universidad de Chile, Casilla 2777,Santiago, Chile.
T.P. Velilla
Affiliation:
Depto. de Química, Facultad de Ciencias Fís. y Mat., Universidad de Chile, Casilla 2777,Santiago, Chile.
V. Del C. Martin
Affiliation:
Depto. de Fís. Exp. y Cs. de Mats., Comisión Chilena, de Energía Nuclear, Casilla 188-D; Santiago, Chile.
R.E. Avila
Affiliation:
Depto. de Fís. Exp. y Cs. de Mats., Comisión Chilena, de Energía Nuclear, Casilla 188-D; Santiago, Chile.
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Abstract

Tetragonal, perovskite type, powders and thin films of PbTiO3 have been synthesized by the sol-gel method, using trihydrate lead acetate and titanium tetraisopropoxide as starting alkoxides. The thermal treatment has been established from differential thermal and thermogravimetric analysis. An interpretation is presented for the various processes occurring during the gel to dense oxide conversion. The optimal process towards thin films includes annealing stages at 180, 400 and 650°C. Thin films were prepared by spinning on Si and Pt-covered Si. By SEM analysis the films appear cracked, porous, or homogeneous, with 0.5 to 1 um per solution coating. Current-voltage characteristics of Al/PT/Pt/Si capacitors exhibit a resistivity of 0.5 to 20·108Ωm, nondestructive breakdown in the range of 4 to over 20V, and relative dielectric permittivity of 100.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 439
Copyright
Copyright © Materials Research Society 1995

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References

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