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Influence of the Cure Process on the Properties of Hydrogen Silsesquioxane Spin-On-Glass

Published online by Cambridge University Press:  15 February 2011

D. Többen
Affiliation:
Siemens Components
P. Weiganda
Affiliation:
Siemens Components
M.J. Shapiro
Affiliation:
Siemens Components IBM Corporation present adress: SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
S.A. Cohen
Affiliation:
IBM Corporation IBM T.J. Watson Research Center, P.O.Box 218, Route 134, Yorktown Heights, NY 10598
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Abstract

Hydrogen silsesquioxane spin-on-glass (SOG) is regarded as a potential low-k material for multilevel metallization (MLM) schemes. In this work we report on the properties of films which have been cured at different temperatures covering the range from 350°C to 850°C. It is found that the material remains in its microporous structures at the lower temperature while it can be strongly densified at increased thermal budgets. The slope of the dielectric constant indicates that care ought to be taken in subsequent metallization anneals in order to preserve the low-k values observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

[1] Ballance, D.S., Scheibert, K.A., and Tietz, J.V., in Proceedings of the 9. VLSI Multilevel Interconnect Conference (VMIC), ed. by Wade, T., pp. 180ff, 1992 Google Scholar
[2] Auman, B.C., in Proceedings of the 1. Dielectrics for VLSIIULSI Multilevel Interconnect Conference, ed. by Wade, T., pp. 297ff, 1995 Google Scholar
[3] Mills, M., Dibbs, M., Martin, S., and Townsend, P., in Proceedings of the 1. Dielectrics for VLSI'ULSI Multilevel Interconnect Conference, ed. by Wade, T., pp. 269ff, 1995 Google Scholar
[4] Hacker, N.P., Drage, J.S., Katsanes, R., and Sebahar, P., in Proceedings of the 12. VLSI Multilevel Interconnect Conference (VMIC), ed. by Wade, T., pp. 138ff, 1995 Google Scholar
[5] Usami, T., Shimokawa, K., and Yoshimaru, M., Jpn. J. Appl. Phys. 33, pp. 408ff, 1994 Google Scholar
[6] Smith, D.M., Anderson, J.M., Cho, C.C., and Gnade, B.E., in Advances in Microporous Materials, edited by Komareni, S., Smith, D.M., and Beck, J.S., (Mater.Res.Soc. 371, Pittsburgh, PA, 1995), pp. 261ff, 1995 Google Scholar
[7] Tobben, D., Grotheloh, D., and Spindler, O., in Proceedings of the 2. Dielectrics for VLSIULSI Multilevel Interconnect Conference, ed. by Wade, T., pp. 29ff, 1996 Google Scholar
[8] Ahlbum, B., Brown, G.A., Seha, T.R., Zoes, T.F., Yokose, Y., Ballance, D.S., and Scheibert, K.A., in Proceedings of the 1. Dielectrics for ULSI/VLSI Multilevel Interconnect Conference (DUMIC), ed. by Wade, T., pp. 36ff, 1995 Google Scholar
[9] Hwang, B.K., Choi, J.H., Shin, H.J., Chung, U.I., Lee, S.I., and Lee, M.Y., in Proceedings of the 12. VLSI Multilevel Interconnect Conference (VMIC), ed. by Wade, T., pp. 113ff, 1995 Google Scholar
[10] Jeng, S.P., Taylor, K., Seha, T., Chang, M.C., Fattaruso, J., and Havemann, R.H., in 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 61ff, 1995 Google Scholar
[11] McGahay, V., Acovic, A., Agarwala, B., Endicott, G., Nguyen, D., Shapiro, M., and Yankee, S., in Proceedings of the 13. VLSI Multilevel Interconnect Conference (VMIC), ed. by Wade, T., pp. 116ff, 1996 Google Scholar
[12] Hwang, B.K., Choi, J.H., Lee, H.J., Goo, J.S., Chung, U.I, and Lee, M.Y., in Proceedings of the 13. VLSI Multilevel Interconnect Conference (VMIC), ed. by Wade, T., pp. 623ff, 1996 Google Scholar