Article contents
The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures
Published online by Cambridge University Press: 15 February 2011
Abstract
Epitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1995
References
REFERENCES
- 4
- Cited by