Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-20T06:16:04.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of the Beam Irradiation Condition With Oblique Incidence on Crystallization of an Si film by a Linearly Polarized Pulse Laser

Published online by Cambridge University Press:  01 February 2011

Yasunori Nakata ,
Hirokazu Kaki  and
Susumu Horita
Yasunori Nakata
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa, JAPAN
Hirokazu Kaki
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa, JAPAN
Susumu Horita
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa, JAPAN
Get access

Abstract

We investigated influence of the beam irradiation conditions with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser in order to enlarge the periodic width of grain boundary. The irradiation conditions are fluence, pulse number and film thickness. We can obtain the periodic width of about 900 nm by increasing the incident angle to 25°. The experimental results suggest that the pulse number and the film thickness should be controlled properly as well as fluence in order to produce large grain stably for the oblique incidence. The detail of these conditions was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ozawa, M., Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys. 38, 5700 (1999).10.1143/JJAP.38.5700Google Scholar
2. Hara, A. and Sasaki, N., Jpn. J. Appl. Phys. 39, L1 (2000).Google Scholar
3. Mariucci, L., Carluccio, R., Pecora, A., Foglietti, V., Fortunato, G., and Sala, D. D., Jpn. J. Appl. Phys. 38, L907 (1999).Google Scholar
4. Rezek, B., Nebel, C. E., and Matsumura, M., Jpn. J. Appl. Phys. 38, L1083 (1999).Google Scholar
5. Oh, C. H., Ozawa, M. and Matsumura, M., Jpn. J. Appl. Phys. 37, L492 (1998).Google Scholar
6. Oron, M., and Sörensen, G., Appl. Phys. Lett. 35, 782 (1979).Google Scholar
7. Fauchet, P. M. and Siegman, A. E., Appl. Phys. Lett. 40, 824 (1982).10.1063/1.93274Google Scholar
8. Horita, S., Nakata, Y. and Shimoyama, A., Appl. Phys. Lett. 78, 2250 (2001).10.1063/1.1362336Google Scholar
9. Siegman, A. E. and Fauchet, P. M., IEEE J. Quantum Electron 22, 1384 (1986).Google Scholar