Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-08T01:57:17.922Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of the Arsine Source on the Purity of InGaAs Grown by Hydride VPE

Published online by Cambridge University Press:  26 February 2011

D. Noel Buckley  and
M. M. Matthiesen
D. Noel Buckley
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. M. Matthiesen
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139. Work performed while at AT&T Bell Laboratories.
Get access

Abstract

The relatively high background carrier concentration obtained in unintentionally doped epitaxial layers of III-V materials imposes a limitation on applications of the hydride VPE process. It is usually attributed to impurities in the gas sources. Results are presented for InGaAs grown by hydride VPE using a range of growth conditions. Carrier concentrations and growth rates for the various samples were determined using, respectively, Polaron electrochemical profiler measurements and scanning electron microscopy. It is shown that the observed background carrier concentration increased with increasing input mole fraction of arsine under conditions of constant growth rate. This strongly implicates the arsine feed gas as a predominant source of impurity. Attempts to purify the arsine feed gas using sodium alumina-silicate molecular sieves are described. Polaron electrochemical profiler measurements and Hall effect measurements on samples grown both with and without molecular sieves in the arsine feed line are presented. From a comparison of the corresponding values of carrier concentration and mobility it is shown that Type 4A molecular sieves were not effective in removing dopant impurities from the 4% arsine-hydrogen mixture used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 335
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Donnelly, V. M. and Karlicek, R. F., J. Appl. Phys. 53, 6399 (1982).CrossRefGoogle Scholar
[2] Karlicek, R. F., Hammarlund, B. and Ginocchio, J., J. A ppl. Phys. 60, 794 (1986).Google Scholar
[3] Kariicek, R. F., Jr., Mitcham, D., Ginocchio, J. C., and Hammarlund, B., J. Electrochem. Soc. 134, 470 (1987).CrossRefGoogle Scholar
[4] Yamauchi, Y., Susa, N. and Kanbe, H., J. Cryst. Growth 56, 402 (1982).CrossRefGoogle Scholar
[5] Olsen, G. H. and Zamerowski, T. J., IEEE J. Quantum Electron. QE-17, 128 (1981).CrossRefGoogle Scholar
[6] Cox, H. M., Koza, M. A., Keramidas, V. G. and Young, M. S., J. Crystal Growth 73, 523 (1985).CrossRefGoogle Scholar
[7] Olsen, G. H. in: GaInAsP Alloy Semiconductors, edited by Pearsall, T. P. (Wiley, New York, 1982) p. 18.Google Scholar
[8] Buckley, D. N., J. Electron. Mater. 17, 15 (1988) and references therein.CrossRefGoogle Scholar
[9] Buckley, D. N., presented at the 1988 Fall Meeting of the Electrochemical Society; to be published J. Electrochem. Soc. (1989).Google Scholar
[10] Roth, T. J., Lee, B., Kim, M. H., Bose, S. S., Stillman, G. E., and Skromme, B. J., presented at the 27th Electronic Materials Conference, Boulder, CO (1985).Google Scholar
[11] Braker, W. and Mossman, A. L., Matheson Gas Data Book 6th ed., 1980, p. 43.Google Scholar