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Influence of the annealing atmosphere on solution based zinc oxide thin film transistors

Published online by Cambridge University Press:  20 May 2011

C. Busch ,
R. Theissmann ,
S. Bubel ,
G. Schierning  and
R. Schmechel
C. Busch
Affiliation:
Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.
R. Theissmann
Affiliation:
Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.
S. Bubel
Affiliation:
Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.
G. Schierning
Affiliation:
Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.
R. Schmechel
Affiliation:
Faculty of Engineering and Center for NanoIntegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.
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Abstract

Zinc oxide layers with a thickness of less than 10 nanometers have been synthesized from an aqueous solution for the application as active layer in thin film transistors. They have been conditioned by applying different oxidizing and reducing atmospheres during an annealing process at a temperature of 125°C. It is shown that the charge carrier mobility and threshold voltage is strongly influenced by the annealing atmosphere. Samples annealed in 10% forming gas (H2 in N2 - reducing atmosphere) show the highest field-effect-mobility of 0.6 cm2V-1s-1, but no saturation of the drain current, due to a high free carrier concentration. Samples treated under oxygen (strongest oxidizing atmosphere) show significantly lower mobilities. Subsequently, the samples have been exposed to synthetic air, with varying exposure times. Samples which have been annealed under hydrogen atmospheres show a pronounced decay of the drain current if exposed to synthetic air, whereas all samples conditioned under hydrogen-free atmospheres are significantly more stable under synthetic air. This enhanced sensitivity against oxygen after hydrogen treatment is attributed to residual hydrogen content in the sample that supports the formation of OH-groups which act as electron acceptors.

Keywords

adsorptionoxidesemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1359: Symposium NN – Electronic Organic and Inorganic Hybrid Nanomaterials—Synthesis, Device Physics and Their Applications , 2011 , mrss11-1359-nn02-11
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Görrn, P., Sander, M., Meyer, J., Kroger, M., Becker, E., Johannes, H.H., Kowalsky, W. and Riedl, T., Adv. Mater. 18, 738 (2006).Google Scholar
2. Subramanian, V., Fréchet, J.M.J., Chang, P.C., Huang, D.C., Lee, J.B., Molesa, S.E., Murphy, A.R., Redinger, D.R. and Volkman, S.K., Proceedings of the IEEE, 93, 1330 (2005).Google Scholar
3. Volkman, S.K., Mattis, B.A., Molesa, S.E., Lee, J.B., De La Fuente Vornbrock, A., Bakhishev, T. and Subramanian, V.. in Technical Digest - International Electron Devices Meeting, IEDM. (2004).Google Scholar
4. Sun, B. and Sirringhaus, H., Nano Lett. 5, 2408 (2005).Google Scholar
5. Mechau, N., Bubel, S., Nikolova, D. and Hahn, H., Phys. Status Solidi A 207, 1684 (2010).Google Scholar
6. Meyers, S.T., Anderson, J.T., Hung, C.M., Thompson, J., Wager, J.F. and Keszler, D.A., J. Am. Chem. Soc. 130, 17603 (2008).Google Scholar
7. Fleischhaker, F., Wloka, V. and Hennig, I., J. Mater. Chem. 20, 6622 (2010).Google Scholar
8. Theissmann, R., Bubel, S., Sanlialp, M., Busch, C., Schierning, G. and Schmechel, R., Thin Solid Films, In Press, Accepted Manuscript, (2011).Google Scholar
9. McCluskey, M.D., Jokela, S.J., Zhuravlev, K.K., Simpson, P.J. and Lynn, K.G., Appl. Phys. Lett. 81, 3807 (2002).Google Scholar
10. Van de Walle, C.G., Phys. Rev. Lett. 85, 1012 (2000).Google Scholar
11. Janotti, A. and Van de Walle, C.G., Reports On Progress In Physics. 72, 126501 (2009).Google Scholar
12. Li, Q.H., Liang, Y.X., Wan, Q. and Wang, T.H., Appl. Phys. Lett. 85, 6389 (2004).Google Scholar
13. Fan, Z., Wang, D., Chang, P.-C., Tseng, W.-Y. and Lu, J.G., Appl. Phys. Lett. 85, 5923 (2004).Google Scholar