Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:32:45.779Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Target Structure on Film Stress in WTI Sputtering

Published online by Cambridge University Press:  10 February 2011

Chi-Fung Lo ,
Hong Wang  and
Paul Gilman
Chi-Fung Lo
Affiliation:
Materials Research Corporation, Orangeburg, NY, USA
Hong Wang
Affiliation:
Materials Research Corporation, Orangeburg, NY, USA
Paul Gilman
Affiliation:
Materials Research Corporation, Orangeburg, NY, USA
Get access

Abstract

In this report, the effect of sputtering target microstructure on the deposited film stress was investigated. By controlling the metallurgical process, two types of W-10wt%Ti target constituents, namely single-phase and multiple-phase WTi, were prepared. The former one was composed of W-rich (βTi,W) phase only, the latter one was with W, W-rich (βTi,W) and Ti-rich (βTi,W) phases. The stress of the films deposited on 12.7 cm diameter silicon oxide wafers from the single-phase target tends to be more compressive than that from the multiple-phase target. By increasing wafer temperature, the compressive stress was linearly decreased. In addition, the level of film stress was also affected by the film thickness and other sputtering parameters. To understand the causes for the differences in film stress between the multiple-phase and singlephase derived films, an evaluation of the film structure using a field-emission scanning electron microscope (FE-SEM) and mechanical testing using a nano-indentation instrument were performed. Finer domains with denser laminar structure were observed on the films deposited from the single-phase target. However, no significant difference in mechanical properties was found between these two from the nano-indentation measurements. It is envisioned that the more uniform solid solution between the W and Ti in the films obtained by sputtering the single-phase targets generates a higher compressive stress when deposited on the silicon oxide wafers resulting in a higher compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 427
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Logan, J. S. and McGill, J. J., J. Vac. Sci. Technol. A, 1875 (1992).Google Scholar
2.Itano, M. et al., Particle on Surface, Vol.3, edited by Mittal, K. L., Plenum Press, 35 (1991).Google Scholar
3.Weiss, C., Ghangari, A. and Selwyn, G., 12th International VLSI Multilevel Interconnection Conference, June 27, 412 (1995).Google Scholar
4.Klokholm, E. and Berry, B. S., J. Electrochem. Soc., 115, 823 (1968).Google Scholar
5.Hoffman, D. W. and Thornton, J. A., J. Vac. Sci. Technol., 20, 355 (1982).Google Scholar
6.Wang, H., Lo, C-F, Gilman, P., and Lin, H., 13th International VLSI Multilevel Interconnection Conference, June 18, 612 (1996).Google Scholar
7.Bailey, R. S., J. Vac. Sci. Technol. A 10, 1701 (1992).Google Scholar