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Influence of Surface Defects on the Characteristics of GaN Schottky Diodes

Published online by Cambridge University Press:  10 February 2011

J-Y. Duboz ,
F. Binet ,
N. Laurent ,
E. Rosencher ,
F. Scholz ,
V. Harle ,
O. Briot ,
B. Gil  and
R. L. Aulombard
F. Scholz
Affiliation:
4.Physikalisches Institut, Universität Stuttgart, D-70550 STUTTGART, Germany
V. Harle
Affiliation:
4.Physikalisches Institut, Universität Stuttgart, D-70550 STUTTGART, Germany
O. Briot
Affiliation:
GES, Université Montpellier II, 34095 MONTPELLIER, France
B. Gil
Affiliation:
GES, Université Montpellier II, 34095 MONTPELLIER, France
R. L. Aulombard
Affiliation:
GES, Université Montpellier II, 34095 MONTPELLIER, France
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Abstract

We have studied the fabrication of Pt/Au Schottky diodes on n-type GaN. We show that the electrical characteristics of the diodes are strongly dependent on the surface chemical treatment before the metal deposition. Lowest leakage currents were obtained by the use of a HC1 solution. We also show that annealing the diode at a moderate temperature (400°C) leads to reduced reverse currents. In order to explain these results, we measured the density of deep levels in the Schottky diode depletion region before and after the annealing process. We did not observe any significant difference in the bulk density of defects due to the anneal. We also studied the temperature dependence of the reverse currents and found a low activation energy. Our results are interpreted in terms of electrical defects at the metal-GaN surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1085
Copyright
Copyright © Materials Research Society 1997

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References

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