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Influence of Silicon Incorporation on the Properties of Hard a-C:H Films

Published online by Cambridge University Press:  22 February 2011

A.L. Baia Neto ,
R.A. Santos ,
F.L. Freire Jr. ,
W. Beyer  and
S.S. Camargo Jr
A.L. Baia Neto
Affiliation:
Depto. de Engenharia Metalurgica e de Materiais, COPPE, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, Brazil
R.A. Santos
Affiliation:
Depto. de Engenharia Metalurgica e de Materiais, COPPE, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, Brazil
F.L. Freire Jr.
Affiliation:
Depto. de Fisica, PUC-Rio, Rio de Janeiro, Brazil
W. Beyer
Affiliation:
ISI-PV, KFA-Jülich, Jülich, Germany
S.S. Camargo Jr
Affiliation:
Depto. de Engenharia Metalurgica e de Materiais, COPPE, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, Brazil
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Abstract

- Results on the properties of silicon incorporated hard a-C:H films deposited on the cathode of a glow discharge decomposition system using methane and silane gaseous mixtures are reported. Obtained samples showed an increased deposition rate, high hardness comparable to that of a-C:H, and a large decrease of the internal stress upon silicon incorporation. The structure of the samples seems to be similar to diamond-like a-C:H, as revealed by the total hydrogen content, infrared absorption and hydrogen effusion experiments. Our results indicate that the observed reduction of residual internal stress may be attributed to a less compact material and/or to a smaller density of voids containing hydrogen in comparison to pure a-C:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 529
Copyright
Copyright © Materials Research Society 1994

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References

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