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Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires

Published online by Cambridge University Press:  01 February 2011

Kamil Sladek ,
Andreas Penz ,
Karl Weis ,
Stephan Wirths ,
Christian Volk ,
Shima Alagha ,
Masashi Akabori ,
Steffi Lenk ,
Martina Luysberg  and
Hans Lueth
...Show all authors
Kamil Sladek
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Andreas Penz
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Karl Weis
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Stephan Wirths
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Christian Volk
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Shima Alagha
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Masashi Akabori
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology (JAIST), Nomi, Japan
Steffi Lenk
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Martina Luysberg
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Hans Lueth
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Hilde Hardtdegen
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Thomas Schaepers
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
Detlev Gruetzmacher
Affiliation:
[email protected], Forschungszentrum Jülich, Jülich, Germany
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Abstract

The influence of Si-doping on the growth and material characteristics of InAs nanowires deposited by metal-organic vapor phase epitaxy (MOVPE) was investigated. It was observed that above a certain partial pressure ratio, doping has an influence on the morphology. The nanowires exhibit better uniformity but lower height vs. diameter aspect ratio as the supply of the dopant increases. It was consistantly found that the specific conductance of the nanowires also increases. Moreover the electrical measurements showed a transition from semiconducting to metallic behavior in the case of highly doped nanowires.

Keywords

nanostructureIII-Vmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-P02-05
Copyright
Copyright © Materials Research Society 2010

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