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Influence of Si Substrate Crystallinity on Device Performance

Published online by Cambridge University Press:  15 February 2011

T. Iwamoto ,
J. Takano ,
K. Makihara  and
T. Ohmi
T. Iwamoto
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, Phone:+81-22-217-7124 / +81-22-263-9395 Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai, 980–77 Japan.
J. Takano
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, Phone:+81-22-217-7124 / +81-22-263-9395 Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai, 980–77 Japan.
K. Makihara
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, Phone:+81-22-217-7124 / +81-22-263-9395 Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai, 980–77 Japan.
T. Ohmi
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, Phone:+81-22-217-7124 / +81-22-263-9395
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Abstract

We have demonstrated the influence of surface microroughness on the electrical characteristics of MOS devices and investigated the influence of wafer's manufacturing methods, such as Czochralski(Cz), floating-zone(FZ), and epitaxial(Epi) silicon wafers, on the susceptibility to the surface microroughness when some chemical treatment was performed. As a result, it was found that Cz and FZ wafers are very susceptible to the surface microroughness and the amount of the vacancy of Epi wafer is much smaller than that of another wafers. It was also demonstrated that the electrical characteristics of very thin gate oxide films are strongly influenced by the silicon substrate quality. Epi wafer is a strong candidate for fablication of highly-reliable devices on 300mm wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 193
Copyright
Copyright © Materials Research Society 1997

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References

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