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Influence of Rapid Thermal Annealing on Self-assembled Quantum-dot Superluminescent Diodes

Published online by Cambridge University Press:  01 February 2011

Z.Y. Zhang ,
Y.Y. Tsui ,
R. Fedosejevs  and
Z.G. Wang
Z.Y. Zhang
Affiliation:
Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB, TG6 2V4, Canada
Y.Y. Tsui
Affiliation:
Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB, TG6 2V4, Canada
R. Fedosejevs
Affiliation:
Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB, TG6 2V4, Canada
Z.G. Wang
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, People's Republic of China
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Abstract

Superluminescent diodes (SLD) have great potential for application as light sources including optical gyroscopes and sensors, optical time domain reflectometers (OTDR) and wavelength-division multiplexing (WDM) system testing. High output power and large spectral bandwidth are key features for SLD. High output power has been attempted by antireflection coating of the facet and utilizing the tapered active region. In addition, as the spectral width broadened, the coherence length is reduced. The short coherence length can reduce the Rayleigh backscattering in fiber gyroscope systems and can improve the spatial resolution in OTDR application. Therefore, broadening spectral width of SLD offers an advantage for obtaining the ultimate sensitivity in these applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V5.1/FF5.1
Copyright
Copyright © Materials Research Society 2005

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References

1. Paoli, T.L., Thornton, R.L., Burnham, R.D. and Smith, D.L.: ‘High-power multiple-emitter AlGaAs superluminescent diodes’ Appl.Phys.Lett. 47, 450 (1985)Google Scholar
2. Middlemast, I., Sarma, I. and Yunus, S.: ‘High power tapered superluminescent diodes using novel etched deflectors’ Electron. Lett., 33, 903 (1997)Google Scholar
3. Yamatoya, Takeshi, Sekiguchi, Shigeaki, Koyama, Fumio, and Iga, Kenichi: ‘High-power CW operation of GaInAsP/InP superluminescent Light-Emitting Diode with tapered active region’ Jpn.J. Appl. Phys. 40, 678 (2001)Google Scholar
4. Asada, M., Miyamoto, Y., and Suematsu, Y.: ‘Gain and the Threshold of Three-Dimensional Quantum-Box Lasers’, IEEE. J. Quantum. Electron. 22, 1915 (1986)Google Scholar
5. Ebiko, Y., Muto, S., Suzuki, D., Itoh, S., Shiramine, K., Haga, T., Nakata, Y., Yokoyama, N.: ‘Island size scaling in InAs/GaAs self-assembled quantum dots’ Phys. Rev. Lett. 80, 2650 (1998)Google Scholar
6. Zhang, Z.Y., Wang, Z.G., Xu, B., Jin, P., Sun, Zh.Zh., Liu, F.Q.: ‘High performance quantum-dot superluminescent diodes’ IEEE Photon. Technol. Lett., Vol 16, No.1, 27 (2004)Google Scholar