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Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon

Published online by Cambridge University Press:  03 September 2012

M. Kittler  and
W. Seifert
M. Kittler
Affiliation:
Institute of Semiconductor Physics, W.-Korsing-Str. 2, POB 409 D-O 1200 Frankfurt (Oder), Germany
W. Seifert
Affiliation:
Institute of Semiconductor Physics, W.-Korsing-Str. 2, POB 409 D-O 1200 Frankfurt (Oder), Germany
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Abstract

Rapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 969
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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