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Influence of Preparation Conditions on Charge Carrier Dynamics In a-Si:H Determined By An In-Siju Technique

Published online by Cambridge University Press:  28 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-institut für Kernforschung Berlin, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Reoublic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-institut für Kernforschung Berlin, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Reoublic of Germany
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Abstract

Contactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 137
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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