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Influence of Preferred Orientation in Indium Tin Oxide.

Published online by Cambridge University Press:  25 February 2011

H. Taniguchi ,
T. Ushiro ,
Y. Okamoto ,
Y. Akagi  and
M. Koba
T. Ushiro
Affiliation:
Materials Research and Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
Y. Okamoto
Affiliation:
Materials Research and Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
Y. Akagi
Affiliation:
Materials Research and Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
M. Koba
Affiliation:
Materials Research and Analysis Center, Corporate R&D Group, Sharp Corporation, Tenri, Nara 632, Japan
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Abstract

We investigated the electrical and optical properties, the chemical composition, the surface morphology and the crystallinity of sputtered Sn-doped In2O3 films deposited on different substrate positions. Both the electric conductivity and the optical transparency are related to the free carrier density and moreover the preferred crystal orientation. The former relation is attributed to the Burstein-Moss effect and the latter suggests the Sn doping mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 523
Copyright
Copyright © Materials Research Society 1993

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References

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