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Influence of Preferred Orientation in Indium Tin Oxide.
Published online by Cambridge University Press: 25 February 2011
Abstract
We investigated the electrical and optical properties, the chemical composition, the surface morphology and the crystallinity of sputtered Sn-doped In2O3 films deposited on different substrate positions. Both the electric conductivity and the optical transparency are related to the free carrier density and moreover the preferred crystal orientation. The former relation is attributed to the Burstein-Moss effect and the latter suggests the Sn doping mechanism.
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- Copyright © Materials Research Society 1993
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