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The Influence of Predeposition of Nonolayer Thin Titanium Filns Upon the Crystallography of Subsequently Formed Pd2Si Layers on (100) Silicon

Published online by Cambridge University Press:  25 February 2011

J. T. McGinn ,
D. M. Hoffman ,
J. H. Thomas, III  and
F. J. Tams III
J. T. McGinn
Affiliation:
RCA Laboratories, Princeton, NJ 08540
D. M. Hoffman
Affiliation:
RCA Laboratories, Princeton, NJ 08540
J. H. Thomas, III
Affiliation:
RCA Laboratories, Princeton, NJ 08540
F. J. Tams III
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

This paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminary model for the formation of epitaxy will be given. Discrepancies between this model and results in the literature will be discussed and experiments suggested to resolve the uncertainties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 231
Copyright
Copyright © Materials Research Society 1987

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References

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