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Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  28 May 2012

M. Baseer Haider ,
M. F. Al-Kuhaili ,
S. M. A. Durrani  and
Imran Bakhtiari
M. F. Al-Kuhaili
Affiliation:
Department of Physics, King Fahd University of Petroleum & Minerals, Dhahran, 31261, Saudi Arabia
S. M. A. Durrani
Affiliation:
Department of Physics, King Fahd University of Petroleum & Minerals, Dhahran, 31261, Saudi Arabia
Imran Bakhtiari
Affiliation:
Department of Physics, King Fahd University of Petroleum & Minerals, Dhahran, 31261, Saudi Arabia
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Abstract:

Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g07-14
Copyright
Copyright © Materials Research Society 2012

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References

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