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The Influence of pH and Temperature on Polish Rates and Selectivity of Silicon Dioxide and Nitride Films

Published online by Cambridge University Press:  10 February 2011

W. G. America ,
R. Srinivasan  and
S.V. Babu
W. G. America
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2024
R. Srinivasan
Affiliation:
Center for Advanced Material Processing, Clarkson University, Potsdam, NY 13699–5705
S.V. Babu
Affiliation:
Center for Advanced Material Processing, Clarkson University, Potsdam, NY 13699–5705
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Abstract

Planarization of dielectric films, silicon dioxide, silicon nitride, etc. by Chemical- Mechanical Polishing (CMP) is regulated and moderated by the interaction of the abrasive particles and chemicals in solution with the film surface through complex chemical and physical processes. Changes in the slurry properties have a profound effect on the polishing chemistry and relative removal rates of dielectric films. Common slurry properties include pH, temperature, abrasive particle composition, its size and shape, degree of agglomeration, and weight percent, and chemical composition. While the slurry vendor has control over most slurry properties, the pH and temperature can be controlled during the polishing process by the user and can have a strong influence. Data are presented highlighting the influence of pH and temperature on the CMP of both blanket and patterned silicon dioxide and silicon nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 13
Copyright
Copyright © Materials Research Society 2000

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References

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