Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T18:28:30.288Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

Published online by Cambridge University Press:  15 February 2011

K. Mahfoud ,
B. Hartiti ,
J. C. Muller  and
P. Siffert
K. Mahfoud
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
B. Hartiti
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
J. C. Muller
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
P. Siffert
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
Get access

Abstract

Local motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.

In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 413
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Green, M. A., Blakers, A. W. and Osterwald., C. R. J. Appl. Phy, 58 (1985) 4402.Google Scholar
2. Narayan, S., Wenham, S. R. and Green., M. A. IEEE. Trans. Electr. Devices, ED–37 (1990) 382.Google Scholar
3. Narayan, S. and Green., M. A. Solar Cells, 26 (1989) 329.Google Scholar
4. Orr, W. and Arienzo, M.. IEEE Trans. Elect. Devices, 29 (1982) 1151.Google Scholar
5. Thomspon, R. D. and Tu., K. N. Appl. Phys. Lett, 41 (1982) 440.Google Scholar
6. Porre, O., Pasquinelli, M., Martinuzzi, S. and Perichaud., I. 11th European Community Photovoltaic Solar Energy Conference Proceedings, (1992) pp. 1053.Google Scholar
7. Davis, J. R. Jr., Rohatgi, A., McCormick, R. and Mollenkopf, H. C. IEEE Trans Electron Devices. ED–27 (1980) 677.Google Scholar
8. Alamo, J. del, Eguren, J. and Luque., A. Solid State Electron. 24 (1981) 415.Google Scholar
9. ASTM Standard, F 391–78, Annual book of ASTM Standards, ASTM Philadelphia, 1979, part 43, p. 770.Google Scholar
10. Egruren, J., Alamo, J. del and Luque, A.. 3rd European Community Photovoltaic Solar Energy Conference Proceedings, (1980) pp. 654.Google Scholar
11. Pasquinelli, M., Martinuzzi, S., Natoli, J. Y. and Floret., F. 22nd IEEE PV Specialists Conference, Las Vegas, NV (1991) pp. 1035–1037.Google Scholar
12. Hartiti, B., Slaoui, A., Muller, J. C., Siffert., P. Schindler, R., Reiss, I., Wagner, B., Eyes., A. 23rd IEEE PV Specialists Conference, Loiusville, (1993) pp. 224.Google Scholar
13. Hartiti, B., Slaoui, A., Muller, J. C. and Siffert., P. Appl. Phys. Lett. 63 (1993) 1249.Google Scholar
14. Verhoef, L. A., Michiels, P.P., Roorda, S., Van Zolingen, R.J. and Sinke., W. C. Materials Science and Engineering. B7 (1990) p. 49–62.Google Scholar
15. Bruton, T. M., Mitchell, A., Taele, R. and Knobloch., J 10th European Photovoltaic Solar Energy conference Proceedings. 1991 p. 320.Google Scholar
16. Kang, J. S. and Schroder., D. K. J. Appl. Phys, 65 (1989) 2974.Google Scholar
17. Green, M., Trans Tech Publications, Nedermannsdorf, 1987, p. 214.Google Scholar
18. Sopori., B. L. Proceeding of the 20th IEEE PVSC (1988) 591.Google Scholar
19. Pizzini, S., Bigoni, L., Chemelli, C. and Beghi., M. J. Electrochem. Soc. vol.133, 11 (1988) 2363.Google Scholar
20. Sopori, B. L., McBrayer, J. D. and Benner., J. 20nd IEEE PVSC, (1990) pp. 653–658.Google Scholar