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Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

Published online by Cambridge University Press:  10 February 2011

S. Ueklsa ,
T. Goto  and
Mv. Kumagai
S. Ueklsa
Affiliation:
Department of Electrical Engineering, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Kawasald, Kanagawa, 214-8571Japan
T. Goto
Affiliation:
Department of Electrical Engineering, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Kawasald, Kanagawa, 214-8571Japan
Mv. Kumagai
Affiliation:
Kanagawa High-technology Foundation, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213Japan
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Abstract

In order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 163
Copyright
Copyright © Materials Research Society 1998

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References

[1] Katsumata, H., Uekusa, S., Majima, A. and Kumagai, M., J. Appl. Phys. 77, 1881 (1995)Google Scholar
[2] Katsumata, H., Uekusa, S. and Sai, H., J. Appl. Phys. 80,2383 (1996)Google Scholar
[3] Uekusa, S., Shimazu, K., Majima, A. and Yabuta, K., Nucl. Instr. and Meth. B 106,477 (1995)Google Scholar
[4] Uekusa, S., Oshima, T., Majima, A. and Kumagai, M., Proc. 1994 International Workshop on Elctoluminescene, Beijing 279–283 (1994)Google Scholar
[5] Majima, A., Uekusa, S., Abe, K., and Kumagai, M., J. Lminescence 60 and 61,595 (1994)Google Scholar
[6] Shin, J. H., van den Hoven, G. N. and Polman, A., Appl. Phys. Lett 67,377 (1995)Google Scholar
[7] Michel, J., Benton, J. L., Fermnte, R. E, Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys. 70,2672 (1991)Google Scholar
[8] Takahei, K. and Taguchi, A., J. Appl.Phys. 74, 1979 (1993)Google Scholar
[9] Uekusa, S., Awahar, K., Shinazu, K. and Kumagai, M., ICSCM-N's97 Proc. (to be published)Google Scholar
[10] Favennec, P. N., L'Haridon, H., Salvi, M., Moutonnet, D. and Guillou, Y Le., Electron Lett Vol. 25, 718 (1989)Google Scholar