Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:28:32.407Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Oxygen Content On Photoluminescence from Er-Doped SiOx

Published online by Cambridge University Press:  10 February 2011

W. D. Chen ,
J. J. Liang  and
C.C. Hsu
W. D. Chen
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing, 100080, P. R. China.
J. J. Liang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing, 100080, P. R. China.
C.C. Hsu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing, 100080, P. R. China.
Get access

Abstract

SiOx films with oxygen concentrations ranging 13–46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2×1015 ions/cm2. The samples were subsequently annealed in N2 for 20 sec at temperatures of (300–950°C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 μm. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er.- luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 107
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lombardo, S.. Campisano, S.U., Hoven, G.N. Van den, Cacciato, A., and Polmcn, A., Appl. Phys. Lett. 63, p. 1942(1993).Google Scholar
2. Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H.. Poate, J.M.. and Kimerling, L.C., J. Appl. Phys. 29, p. 2672(1991).Google Scholar
3. Favennec, P.N., Haridon, H.L., Moutonnet, D., Salvi, M., and Gauneau, M., Japan J. Appl. Phys. 29. p. L524(1991).Google Scholar
4. Terrasi, A., Franro, G., and Coffa, S., Appl. Phys. Lett. 70, p. 1712 (1997).Google Scholar