Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-05T14:23:53.700Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

P. J. Drevinsky ,
C. E. Caefer ,
S. P. Tobin ,
J. C. Mikkelsen Jr  and
L. C. Kimerling
P. J. Drevinsky
Affiliation:
Rome Air Development Center, Solid State Sciences Directorate, Hanscom AFB, MA 01731
C. E. Caefer
Affiliation:
Rome Air Development Center, Solid State Sciences Directorate, Hanscom AFB, MA 01731
S. P. Tobin
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
J. C. Mikkelsen Jr
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 167
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For example, selected papers in Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J.C. Jr, Pearton, S.J., Corbett, J.W., and Pennycook, S.J. (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1986).Google Scholar
2.McLarty, P.K., Cole, J.W., Galloway, K.F., Ioannou, D.E., and Bernacki, S.E., Appl. Phys. Lett. 51, 1078 (1987).Google Scholar
3.Mooney, P.M., Cheng, L.J., Suli, M., Gerson, J.D., and Corbett, J.W., Phys. Rev. B 15, 3836 (1977).Google Scholar
4.Kimerling, L.C., in Radiation Effects in Semiconductors, 1976, edited by Urli, N.B. and Corbett, J.W. (Institute of Physics Conference Series 31, London, 1977), p. 221.Google Scholar
5.Baliga, B.J. and Evwaraye, A. O, J. Electrochem. Soc. 130, 1916 (1983).Google Scholar
6.Drevinsky, P.J. and DeAngelis, H.M., in Thirteenth International Conference on Defects in Semiconductors, edited by Kimerling, L.C. and Parsey, J.M. Jr (The Metallurgical Society of AIME, Warrendale, PA, 1985), p. 807.Google Scholar
7. ASTM F121–83Google Scholar
8.Newman, R.C. and Willis, J.B., J. Phys. Chem. Solids 26, 373 (1965).Google Scholar
9.Mikkelsen, J.C. Jr, Appl. Phys. Lett. 40, 336 (1982).Google Scholar
10.Schott, J.T., DeAngelis, H.M., and Drevinsky, P.J., J. Electron. Mater. 9, 419 (1980).Google Scholar
11.Miller, G.L., Lang, D.V., and Kimerling, L.C., Ann. Rev. Mater. Sci. 7, 377 (1977).Google Scholar
12.Weinberg, I. and Swartz, C.K., Appl. Phys. Lett. 36, 693 (1980).Google Scholar
13.Asom, M.T., Benton, J.L., Sauer, R., and Kimerling, L.C., Appl. Phys. Lett. 51, 256 (1987).Google Scholar
14.Watkins, G.D., in Radiation Damage in Semiconductors, edited by Baruch, P. (Dunod, Paris, 1965), p. 97.Google Scholar