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Influence of near-surface and volume real structure on the electronic properties of SrTiO3 MIM structures

Published online by Cambridge University Press:  23 June 2011

J. Seibt
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
F. Hanzig
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
R. Strohmeyer
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
H. Stoecker
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
C. Himcinschi
Affiliation:
Institute of Theoretical Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
B. Abendroth
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
D. C. Meyer
Affiliation:
Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany
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Abstract

Perovskite-type transition metal oxides have great potential as storage material in resistive random-access memory (RRAM) devices. Typical non-volatile memory cells are realized in metal-insulator-metal (MIM) stacks with insulator thicknesses of few nanometers. We report on the investigation of single-crystal SrTiO3 to understand the role of volume and interface real structure for the electrical conductivity in such materials. Conductivity in SrTiO3 single crystals was established by a reducing high vacuum (HV) annealing introducing charged oxygen vacancies acting as donor centers. Titanium electrodes are evaporated on both crystal faces to obtain an MIM element.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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