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Influence of Mo on the Epitaxial Crystallization of Silicon

Published online by Cambridge University Press:  10 February 2011

S. Thoma ,
J. K. N. Lindner  and
B. Stritzker
S. Thoma
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
J. K. N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

The influence of Mo atoms on the solid phase epitaxial crystallization of amorphous silicon layers on (100) and (111) Si substrates has been studied by RBS/channeling and cross-sectional TEM. For this purpose, Mo doped amorphous surface layers were produced by low temperature 180 keV Mo+ ion implantation with different doses. Mo is observed to cause enhanced crystallization rates for both (100) and (111) substrates, compared to literature data on pure amorphous silicon. Similar to pure Si, recrystallization in <100> directions is much faster than in <111> directions, where two different velocities are found. For (111) substrates, the formation of thick, uniformly twinned layers is observed. Annealing for several hours at 550° C does not lead to detectable changes of the Mo depth distribution, but for high doses the formation of hexagonal MoSi2 precipitates is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 489
Copyright
Copyright © Materials Research Society 1998

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References

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