Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-05T05:10:48.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Mg on Resistivity, Adhesion, Agglomeration of Ag(Mg)/SiO2/Si Multilayers

Published online by Cambridge University Press:  15 March 2011

Bongjoo Kang ,
Heejung Yang ,
Sungjin Hong ,
Yeonkyu Ko ,
Chang-Oh Jeong  and
Jaegab Lee
Bongjoo Kang
Affiliation:
School of Metallurgical and Materials Engineering, Kookmin University, Seoul, 136-702, Korea
Heejung Yang
Affiliation:
School of Metallurgical and Materials Engineering, Kookmin University, Seoul, 136-702, Korea
Sungjin Hong
Affiliation:
School of Metallurgical and Materials Engineering, Kookmin University, Seoul, 136-702, Korea
Yeonkyu Ko
Affiliation:
School of Metallurgical and Materials Engineering, Kookmin University, Seoul, 136-702, Korea
Chang-Oh Jeong
Affiliation:
Samsung Electronics Co., LTD., R&D Team, AMLCD Division, Kiheung-Eup, Yongin-City, Kyunggi-Do, Korea
Jaegab Lee
Affiliation:
School of Metallurgical and Materials Engineering, Kookmin University, Seoul, 136-702, Korea
Get access

Abstract

The effect of Mg in Ag(Mg)/SiO2/Si multilayers on adhesion, agglomeration, and resistivity after annealing in vacuum at 200 to 500 have been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in MgO/Ag(Mg)/MgO/SiO2/Si structure. The presence of surface MgO provided the passivation against air, thus leading to the significantly enhanced resistance to agglomeration. In addition, the resistivity of Ag(Mg) film decreased by lowering Mg content and increasing the annealing temperature as well. Furthermore, Ag adhesion to SiO2 was improved due to the formation of the interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. Also, the negligible solubility of Si in Ag prevented the dissolution of free silicon produced from the reaction, Mg + SiO2 = MgO + Si, which was in contrast with the dissolution of a significant amount of silicon released from the SiO2 substrate in Cu(Mg)/SiO2/Si multilayers after annealing at high temperature, e.g., 400. The dissolved Si in Cu caused the rapid increase in resistivity in Cu(Mg)/SiO2/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A9.9
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, Y. and Alford, T. L., Appl. Phys. Lett. 74, 52 (1999).Google Scholar
2. Nguyen, Phucanh, Zeng, Yuxiao, and Alford, T.L., J.Vac.Sci.Technol.B 19(1), 158 (2001).Google Scholar
3. Jeong, C.O., Roh, N.S., Kim, S.G., Park, H.S., Kim, C.W., Sakong, D.S., Seok, J.H., Chung, K.H., Lee, W.H., Gan, Dongwen, ho, Paul S., Cho, B.S., Kang, B.J., Yang, H.J., Ko, Y.K., and Lee, J.G., “Feasibility of an Ag-alloy Film as a Thin Film Transistor Liquid Crystal display”, submitted.Google Scholar
4. Hauder, M., Gstottner, J., Hansch, W., and Schmitt-Landsiedel, D., Appl. Phys. Lett. 78, 838 (2001).Google Scholar
5. Kondoh, E. and Asano, T., “Material issues in silver metallization”, Conference Proceedings ULSI XV, Materials Research society, 219 (2000).Google Scholar
6. Sharma, S.K. and Spitz, J., Thin Solid Films, 65, 339–350 (1980).Google Scholar
7. Muller, C.O., Corrosion (Houston) 47, 146 (1991).Google Scholar
8. Lee, Wonhee, Cho, Heunglyul, Cho, Bumseok, Kim, Jiyoung, Kim, Yong-suk, Jung, Woo-Gwang, Kwon, Hoon, Lee, Jinhyung, Lee, Chongmu, Reucroft, P.J., and Lee, Jaegab, J.Vac.Sci.Technol.A 18(6) 2972–2977 (2000).Google Scholar