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Influence of Ion Bombardment on the Nucleation and Growth of Plasna Deposited Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

A. M. Antoine  and
B. Drevillon
A. M. Antoine
Affiliation:
Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique, 91128 - PALAISEAU (France)
B. Drevillon
Affiliation:
Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique, 91128 - PALAISEAU (France)
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Abstract

Real-time spectroscopic phase modulated ellipsometry is used to study the influence of ion bombardment on the growth of plasma deposited amorphous silicon (a-Si:H). The influence of the relative ion flux impinging on the substrate is discussed by comparing a-Si:H films deposited in RF and multipole discharges. A nucleation process is observed in the early stage of the growth of a-Si:H deposited on chromium substrates. When the ion bombardment is strong (multipole plasma) a coalescence of the island structure is observed leading to the formation of a high density film with a smooth interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 333
Copyright
Copyright © Materials Research Society 1987

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References

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