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Influence of Interface Roughness Scattering on Electron Mobility in GaAs-Al0.3Ga0.7 as Two Dimensional Electron Gas (2DEG) Heterostructures

Published online by Cambridge University Press:  21 February 2011

Bin Yang ,
Yong-Hai Cheng ,
Zhan-Guo Wang ,
Ji-Ben Liang ,
Qi-Wei Liao ,
Lan-Ying Lin ,
Zhan-Ping Zhu ,
Bo Xu  and
Wei Li
Bin Yang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Yong-Hai Cheng
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Zhan-Guo Wang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Ji-Ben Liang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Qi-Wei Liao
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Lan-Ying Lin
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Zhan-Ping Zhu
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Bo Xu
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Wei Li
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
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Abstract

We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas(2DEG) in GaAs-AlGaAs modulation-doped heterostructures(MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015cm-3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density(Nş ≥5× 1011cm2) GaAs-AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs-AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 545
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1]. Ando, T., Fowler, A.B. and Stern, F., Rev. Mod. Phys. 54, 437 (1982)Google Scholar
[2]. Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., and Matsusue, T., Appl. Phys. Lett. 51, 1934 (1987)Google Scholar
[3]. Gottinger, R., Gold, A., Abstreiter, A., Weimann, G., and Schlapp, W., Europhys. Lett 6, 183 (1988)Google Scholar
[4]. Ando, T., J. of the Phys. Soci, of Jpn. 51, 3900 (1982)Google Scholar
[5]. Walukiewicz, W., Ruda, H.E., Lagowski, J., and Gatos, H.C., Phys. Rev. B 30, 4571 (1987)Google Scholar
[6]. Hiyamizu, S., Saito, J., Nanbu, K., and Ishikawa, T., Jpn. J. of Appl. Phys. 22, L609 (1983)Google Scholar
[7]. Yang, Bin, Cheng, Yong-hai, Wang, Zhan-guo, Liang, Ji-Ben, Liao, Qi-wei, Lin, Lan-ying, “Study on the Scattering Mechanisms of GaAs/AlGaAs 2DEG Heterostructure” Chinese Journal of Semiconductors, to be published(accepted).Google Scholar
[8]. Ando, T., J. of the Phys. Soci, of Jpn. 51, 3893 (1982)Google Scholar
[9]. Stormer, H.L., Gossard, A.C., Wiegmann, W., Solid State Communication 41, 707 (1982)Google Scholar
[10]. Singh, J., Bajajaj, K.K., J. Appl. Phys. 57(12), 5433 (1985)Google Scholar
[11]. Bimberg, D., Christen, J., Fukunaga, T., Nakashima, H., Mars, D.E. and Miller, J.N., J. Vac. Sci. Technol. B5(4), 1192 (1987)Google Scholar
[12]. Liang, Ji-ben, Wang, Zhan-guo, Kong, Mei-ying, Zhu, Zhan-ping, Yang, Bin, Xu, Bo, Li, Wei, Kuang, Guo-kui, Proceeding of The Fourth Chinese National Conference on Thin Solid Films, 171 (1994)Google Scholar