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Influence of High Oxygen Partial Pressure on the Positive Temperature Coefficient Resistivity of BaTiO3
Published online by Cambridge University Press: 15 February 2011
Abstract
The influence of high oxygen partial pressures on the PTC behavior of non acceptor doped BaTiO3 is studied by using oxygen-hot-isostatic-press (O2-HIP). Annealing in high oxygen partial pressures increased the maximum resistivity with a factor 3, also the minimum resistivity and the gradient in the Arrhenius plot, i.e. resistivity versus the reciprocal of the temperature, increased. The results are analyzed using the well accepted Heywang model. The changes after O2-HIPping can be explained with an increase in acceptor density at the grain boundaries.
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- Copyright © Materials Research Society 1992
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