Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T16:41:32.888Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence Of Growth Parameters On Interface Broadening In Mbe-Grown Interfaces: A Non Destructive Study By Magneto-Optics

Published online by Cambridge University Press:  15 February 2011

W. Grieshaber ,
A. Haury ,
J. Cibert ,
Y. Merle d'Aubigné  and
A. Wasiela
W. Grieshaber
Affiliation:
Laboratoire de Spectrométrie Physique; B.P. 87; 38402 St. Martin d'Hbres; France.
A. Haury
Affiliation:
Laboratoire de Spectrométrie Physique; B.P. 87; 38402 St. Martin d'Hbres; France.
J. Cibert
Affiliation:
Laboratoire de Spectrométrie Physique; B.P. 87; 38402 St. Martin d'Hbres; France.
Y. Merle d'Aubigné
Affiliation:
Laboratoire de Spectrométrie Physique; B.P. 87; 38402 St. Martin d'Hbres; France.
A. Wasiela
Affiliation:
Laboratoire de Spectrométrie Physique; B.P. 87; 38402 St. Martin d'Hbres; France.
Get access

Abstract

We present a detailed study of the influence of growth parameters on the broadening of CdTe-CdMnTe interfaces using a new magneto-optical technique [1,2] in MBE-grown quantum wells and superlattices. For growth temperatures up to about 300°C the Mn content decreases exponentially at the CdTe on CdMnTe interface and conversely the Cd one decreases exponentially at the CdMnTe on CdTe interface. At temperatures exceeding 300°C an additional broadening takes place which acts equally on both interfaces. Growth interruptions and modified flux stoechiometry do not exhibit significant influence on the broadening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 121
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Grieshaber, W., Bodin, C., Cibert, J., Wasiela, A., Merle-d'Aubigné, Y., Gaj, J., Feuillet, G. (Mat. Res. Soc. Proc. 340, Pittsburgh, PA, 1994) p.587–592.Google Scholar
2 Grieshaber, W., Cibert, J., Gaj, J. A., d'Aubigné, Y. Merle, Wasiela, A., Phys. Rev. B, 50, 2011 (1994).Google Scholar
3 Kopf, R. F., Schubert, E. F., Harris, T. D., Becker, R. S., Appl. Phys. Lett. 58, 631 (1991).Google Scholar
4 Grieshaber, W., Haury, A., Cibert, J., d'Aubigné, Y. Merle, A. Wasiela to be published.Google Scholar
5 Gaj, J. A., Grieshaber, W., Bodin, C., Cibert, J., d'Aubigné, Y. Merle, Wasiela, A., Phys. Rev. B 50, 5512 (1994).Google Scholar
6 Moison, J. M., Guille, C., Houzay, F., Barthe, F., Rompay, M. Van, Phys. Rev. B 40, 6149 (1989).Google Scholar
7 Kuroda, S., Kojima, K., Kobayashi, K., Saito, A., Takita, K., Uchida, K., Miura, N., 4th Int. Workshop on Semimagnetic Semiconductors, Linz, 1994; Materials Science Forum 18, 615 (1995).Google Scholar
8 Grieshaber, W., Bodin, C., Cibert, J., Gaj, J. A., d'Aubigné, Y. Merle, Wasiela, A., Feuillet, G., Appl. Phys. Lett. 65, 1287 (1994).Google Scholar
9 Dehaese, O., Wallart, X., Mollot, F., Appl. Phys. Lett. 66, 52 (1995).Google Scholar