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Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

Published online by Cambridge University Press:  25 February 2011

S.P. Faure
Affiliation:
also with Laboratoire de Chimie de la Matière Condensée, Université Pierre et Marie CURIE, 75532 PARIS CEDEX 05, France
P. Gaucher
Affiliation:
Laboratoire central de recherches, THOMSON-CSF, Domaine de Corbeville, 91404 ORSAY-CEDEX, FRANCE
J.P. Ganne
Affiliation:
Laboratoire central de recherches, THOMSON-CSF, Domaine de Corbeville, 91404 ORSAY-CEDEX, FRANCE
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Abstract

Ferroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Vest, R.W. andZHU, W., Ferroelectrics, 119, 6175 (1991).Google Scholar
2. Roy, R.A., Etzold, K.F., and Cuomo, J.J. in Ferroelectric Thin Films, edited byMyers, E.R. andKingon, A.I. (Mater.Res.Soc. Symp.Proc., 200, Pittsburgh, PA, 1990) pp.141150.Google Scholar
3. Carim, A.H., Tuttle, B.A., Doughty, D.H., and Martinez, S.L., J.Am.Soc. 74 (6)1455–58 (1991).Google Scholar
4. Myers, S.A. andChapin, L.N. in Ferroelectric Thin Films, edited byMyers, E.R. andKingon, A.I. (Mater.Res.Soc.Symp.Proc., 200, Pittsburgh, PA, 1990) pp.231236.Google Scholar
5. Sudhama, C., Carrano, J.C., Parker, L.H., Chikarmane, V., Lee, J.C., Tasch, A.F., Miller, W., Abt, N., and Shepherd, W.H. in Ferroelectric Thin Filma, edited byMyers, E.R. and Kingon, A. I. (Mater.Res. Soc.Symp.Proc., 200, Pittsburgh, PA, 1990) pp.331–36.Google Scholar
6. Sanchez, L.E., Dion, D.T., Wu, S.Y., and Naik, I.K., Ferroelectrics, 116, 117 (1991).Google Scholar
7. Spierings, G.A.C.M., Ulenaers, M.J.E., Kampschöer, G.L.M., Hal, H.A.M. van, ank Larsen, P. K., J. Appl. Phys. 70 (4) 2290–98(1991).Google Scholar
8. Chapin, L.N. andMyers, S.A. in Ferroelectric Thin Films, edited byMyers, E.R. andKingon, A.I. (Mater.Res.Soc.Symp.Proc., 200, Pittsburgh, PA, 1990) pp.153–58 (1990).Google Scholar
9. , Scott and al.(IEEE Conf. Applied Ferroelectricity, Lehigh Univ., 1986).Google Scholar
10. Faure, S.P., Barboux, P., and Gaucher, P. (7th European Meeting on Ferroelectricity, 1991, Dijon, France), to be published in Ferroelectrics.Google Scholar
11. Jacobs, J.T. andKeester, K.L., J.Vac.Sci.Tech.,10,1,231(1973).Google Scholar