Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T01:59:34.249Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Fluorine Desorption from ECR-CVD SiOF Film

Published online by Cambridge University Press:  15 February 2011

Tatsuya Usami ,
Hiraku Ishikawa  and
Hideki Gomi
Tatsuya Usami
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
Hiraku Ishikawa
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
Hideki Gomi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa Kanagawa,229 JAPAN
Get access

Abstract

The influence of fluorine desorption from SiOF films deposited by biased ECR-CVD was studied. It was found that desorbed F atoms from the SiOF film react with Ti suicide film resulting in forming SiF4 gas. The evolution of SiF4 gas caused the peel-off of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 69
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakagawa, O.S., Rahmat, K., Oh, S.-Y., Ray, G. and Kumar, R., Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications, Portland, OR, 1995, pp129–135.Google Scholar
2. Lee, P.W., Mizuno, S., Verma, Amrita, Tran, H., and Nguyen, B. J. Electrochem. Soc., Vol.143, No.6, pp2015–2019 (1996).Google Scholar
3. Lee, S.M., Park, M., Park, K.C., Baek, J.T., and Jang, J., Extended Abstracts of International Conference on Solid State Devices and Materials, Osaka, 1995, pp 602–604.Google Scholar
4. Homma, T., Proceedings of Materials Research Society Symposium, San Francisco, CA, 1995, pp239–248.Google Scholar
5. Bose, A., Garver, M.M. and Spencer, A., Proceedings of VMIC Conference, Santa Clara, CA, 1993, pp89–95.Google Scholar
6. Kudo, H., Shinohara, R., Takeishi, S., Awaji, N., and Yamada, M., Extended Abstracts of International Conference on Solid State Devices and Materials, Osaka, 1995, pp605–607.Google Scholar
7. Hayasaka, N., Miyajima, H., Nakasaki, Y. and Katsumata, R., Extended Abstracts of International Conference on Solid State Devices and Materials, Osaka, 1995, pp157–159.Google Scholar
8. Li, W., Reddy, K., Catabay, W., and Gupta, A., Proceedings of VMIC Conference, Santa Clara, CA, 1996, pp125–127.Google Scholar
9. Fukada, T. and Akahori, T., Proceedings of DUMIC Conference, Santa Clara, 1995, pp43–49.Google Scholar
10. Kito, H., Muroyama, M., Sasaki, M., Iwasawa, M. and Kimura, H., Extended Abstracts of International Conference on Solid State Devices and Materials, Osaka, 1995, pp 160–162.Google Scholar
11. Ikegami, N., Ozawa, N., Miyakawa, Y., Hirasita, N. and Kanamori, J. Jpn. J. Appl. Phys., Vol.31, pp2020–2024 (1992).Google Scholar