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Influence of Electric Field on the Formation of Neutron, Electron and γ-Ray Radiation Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

Wu Fengmei ,
Shi Yi ,
Wang Zhenzhou ,
Lai Qiji  and
Zhao Lihua
Wu Fengmei
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210008, P.R., China
Shi Yi
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210008, P.R., China
Wang Zhenzhou
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210008, P.R., China
Lai Qiji
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210008, P.R., China
Zhao Lihua
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210008, P.R., China
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Abstract

The influence of an electric field on the formation of radiation-induced defects in silicon irradiated respectively with γ-ray, electrons and neutrons has been investigated using the DLTS method. It is found that the application of an electric field across the p-n junction during irradiation can reduce the formation efficiency of A-centers, divacancies and E3(Ec-0.37 eV) defects, and that the concentration of radiation defects in the junction depletion region is lower than that in the quasineutral bulk. The formation characteristics of radiation defects in the depletion region could be related mainly to the transformation of the charge states of the defects caused by the electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 117
Copyright
Copyright © Materials Research Society 1993

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