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The Influence of CuCl Treatment on the PL Spectra of CdTe Thin Film, Component of CdS/CdTe Heterojunctions

Published online by Cambridge University Press:  31 January 2011

Sergiu A Vatavu ,
Hehong Zhao ,
Iuliana M Caraman ,
Petru A Gasin ,
Don L Morel  and
Chris S Ferekides
Sergiu A Vatavu
Affiliation:
[email protected], Moldova State University, Physics, Chisinau, Moldova
Hehong Zhao
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, Florida, United States
Iuliana M Caraman
Affiliation:
[email protected], University of Bacau, Engineering, Bacau, Romania
Petru A Gasin
Affiliation:
[email protected], Moldova State University, Physics, Chisinau, Moldova
Don L Morel
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, Florida, United States
Chris S Ferekides
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, Florida, United States
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Abstract

Technology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.

Keywords

luminescencephotovoltaicII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-16
Copyright
Copyright © Materials Research Society 2009

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