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Influence of Carbon on Structural, Optical and Electrical Properties of Microcrystalline Silicon Carbide.

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
C.F. Pirri ,
E. Tresso ,
G. DellaMea ,
A. Quaranta ,
V. Rigato ,
M. Ferraris  and
P. Rava
F. Demichelis
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
C.F. Pirri
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
G. DellaMea
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy) Laboratori INFN di Legnaro PD (Italy) Dip. Ing. Materiali Univ. di Trento (Italy)
A. Quaranta
Affiliation:
Unita' INFM Universita' di Padova (Italy)
V. Rigato
Affiliation:
Laboratori INFN di Legnaro PD (Italy) Dip. Ing. Materiali Univ. di Trento (Italy)
M. Ferraris
Affiliation:
Centro Ricerche FIAT (Orbassano TO, Italy)
P. Rava
Affiliation:
Elettrorava S.p.A (Savonera To, Italy)
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Abstract

Microcrystalline films of SiC.H have been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiH4+CH4+H2 mixtures with high power density and high H2 dilution, at variable CH4/SiH4 ratios. Their elemental composition, structural, optical and electrical properties have been investigated in order to evidence the influence of hydrogen and carbon on microcrystallinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 607
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Hamakawa, Y. and Okamoto, H. -“Wide band-gap semiconductors”- MRS Proceedings (1991) (in press)Google Scholar
[2] Goldstein, B., Dickson, C.R., Campbell, I.H. and Fanchet, P.M. - Proc. 8th E.C. Photovoltaic Solar Energies Conf. - Kluwer Ptc. Pubbl. 969, (1988)Google Scholar
[3] Demichelis, F., Pirri, C.F. and Tresso, E. - Phil. Mag. B, 1992 (in press)Google Scholar
[4] Demichelis, F., Pirri, C.F. and Tresso, E. - Journ. of Appl. Phys., 1992 (in press)Google Scholar
[5] Willeke, G. and Martins, R. - Phyl. Mag. B, 65, 79 (1991)Google Scholar
[6] Wang, H. and Zhou, G.Q. - Nucl. Instr. and Meth. B 34, 145 (1988)Google Scholar
[7] Chu, W.X., Mayer, J.W. and Nicolet, M.A. - “Backscattering Spectrometry” - Academic Press, New York (1978)Google Scholar
[8] Berti, M. and Drigo, A.V. - Nucl. Instr. and Meth. 201, 473 (1982)Google Scholar
[9] Demichelis, F., Pirri, C.F., Tresso, E. and Stapinski, T. - Journ. Appl. Phys. 71 (1992) (in press)Google Scholar
[10] Lucovsky, G. and Wang, C. - MRS Soc. Symp. Proc. 219, 377 (1991)CrossRefGoogle Scholar