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Influence of Boron-Doping on Hydrogen Diffusion and Effusion in a-Si:H and a-Si-Alloys

Published online by Cambridge University Press:  26 February 2011

W. Beyer ,
J. Herion ,
H. Mell  and
H. Wagner
W. Beyer
Affiliation:
Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Jülich, Federal Republic of Germany
J. Herion
Affiliation:
Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Jülich, Federal Republic of Germany
H. Mell
Affiliation:
Fachbereich Physik, Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
H. Wagner
Affiliation:
Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Jülich, Federal Republic of Germany
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Abstract

The change of the hydrogen effusion spectra and of deuterium in-diffusion profiles in a-Si:H and a-Si alloys by boron doping is attributed to a Fermi level dependent change of the Si-H bond rupture energy. For low and high substrate temperatures additional effects occur due to structural heterogeneity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 291
Copyright
Copyright © Materials Research Society 1988

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References

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5. Beyer, W., J. Non-Cryst. Solids 97 & 98, 1027 (1987).CrossRefGoogle Scholar