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Influence of Boron Diffusion on Ultra-Thin Oxides

Published online by Cambridge University Press:  10 February 2011

T. Nigam ,
M. Depas ,
M. Heyns ,
C. J. Sofielc  and
L. Mapeldoram
T. Nigam
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
M. Depas
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
M. Heyns
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
C. J. Sofielc
Affiliation:
AEA Technology, 477 Harwell, Didcot, UK
L. Mapeldoram
Affiliation:
AEA Technology, 477 Harwell, Didcot, UK
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Abstract

In this paper the effect of different annealing conditions on boron diffusion is studied for 3 nm gate dielectrics. The use of amorphous material instead of polycrystalline material and the influence of nitridation (two-step N2O oxidation) was investigated. A better control on the flatband voltage (VFB) shift was observed for amorphous-Si gate as compared to polycrystalline-Si gate. A reduction in VFB was observed for N2O oxides as compared to pure oxides, but VFB was still above the ideal value for some of the thermal treatments. A significant reduction in QBD is observed for p+ gates as compared to n+ gates. The lowest post-implantation anneal gives the highest QBD for all the different combinations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 101
Copyright
Copyright © Materials Research Society 1997

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References

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