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Influence of atomic hydrogen on intrinsic defects in CuInSe2

Published online by Cambridge University Press:  21 March 2011

Karsten Otte ,
Gerd Lippold ,
Wilfried Frank ,
Axel Wenzel ,
Johann Krauser ,
Alois Weidinger  and
Axel Schindler
Karsten Otte
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany, [email protected]
Gerd Lippold
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
Wilfried Frank
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
Axel Wenzel
Affiliation:
Universität Augsburg, 86135 Augsburg, Germany
Johann Krauser
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany
Alois Weidinger
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany
Axel Schindler
Affiliation:
Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
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Abstract

Hydrogen with an energy of 300 eV was implanted into single crystalline CuInSe2 samples at temperatures of 200 °C and 300 °C during implantation. We found that the hydrogen is not limited to the expected implantation depth but diffuses into the bulk of the sample. The hydrogen concentration ranges from 1019 H/cm3 in a depth of about 300 nm up to some 1021 H/cm3 next to the surface and resembles a diffusion profile. The hydrogen induced change of composition was not only at the surface, but also up to a depth of about 200 nm similar to that of the hydrogen profile. Mainly a Cu deficiency after hydrogen implantation could be observed and is explained as the passivation of VCu by hydrogen and the additional production of VCu by the induced band-bending.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.20
Copyright
Copyright © Materials Research Society 2001

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References

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