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The Influence of Amorphizing Implants on Boron Diffusion in Silicon

Published online by Cambridge University Press:  15 February 2011

H. S. Chao ,
P. B. Griffin  and
J. D. Plummer
H. S. Chao
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, California 94305
P. B. Griffin
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, California 94305
J. D. Plummer
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, California 94305
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Abstract

The transient enhanced diffusion behavior of B after ion implantation above the amorphization threshold is investigated. The experimental structure uses a layer of epitaxially grown Si, uniformly doped with B to act as a diffusion monitor. Wafers using this structure are implanted with amorphizing doses of Si, As, or P and annealed for various times at various temperatures. The experimental results show that upon annealing after Si implantation, there is a large amount of B pile-up that occurs at the amorphous/crystalline (A/C) interface while B is depleted from the region just beyond the A/C interface. This pile-up/depletion phenomenon can be attributed to the dislocation loops that form at the A/C interface. These loops act as sinks for interstitial point defects. There is also B pile-up/depletion behavior for As and P implants as well. However, this behavior may be explained by an electric field enhancement effect. While dislocation loops are known to form at the A/C interface for all of the investigated implant conditions, it appears that while they are necessary to simulate for Si amorphizing implants, they may not be necessary to simulate for As and P amorphizing implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 347
Copyright
Copyright © Materials Research Society 1997

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References

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