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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

Published online by Cambridge University Press:  15 February 2011

Hyun Cho ,
Y.B. Hahn ,
D.C. Hays ,
K.B. Jung ,
S.M. Donovan ,
C.R. Abernathy ,
S.J. Pearton  and
R.J. Shul
Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
Y.B. Hahn
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
D.C. Hays
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
K.B. Jung
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
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Abstract

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AIN were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.56
Copyright
Copyright © Materials Research Society 1999

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