No CrossRef data available.
Article contents
Individualization and Electrical Characterization of SiGe Nanowires
Published online by Cambridge University Press: 11 January 2012
Abstract
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb10-06
- Copyright
- Copyright © Materials Research Society 2012