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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy

Published online by Cambridge University Press:  17 March 2011

Huajie Chen ,
R. M. Feenstra ,
J. E. Northrup ,
J. Neugebauer  and
D. W. Greve
Huajie Chen
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
J. Neugebauer
Affiliation:
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Abstract

InGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical cal- culations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to ex- plain the observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G2.6
Copyright
Copyright © Materials Research Society 2001

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References

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