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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy

Published online by Cambridge University Press:  17 March 2011

Huajie Chen ,
R. M. Feenstra ,
J. E. Northrup ,
J. Neugebauer  and
D. W. Greve
Huajie Chen
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
J. Neugebauer
Affiliation:
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Abstract

InGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical cal- culations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to ex- plain the observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G2.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
[2] Chen, H., Smith, A. R., Feenstra, R. M., Greve, D. W., and Northrup, J. E., MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (1999).Google Scholar
[3] Northrup, J. E. and Neugebauer, J., Phys. Rev. B 60, 8473 (1999).Google Scholar
[4] Chen, H., Feenstra, R. M., Northrup, J. E., Zywietz, T., Neugebauer, J., and Greve, D. W., J. Vac. Sci. Technol. B 18, 2284 (2000).Google Scholar
[5] Ramachandran, V., Brady, M. F., Smith, A. R., Feenstra, R. M., Greve, D. W., J. Electron. Mater. 27, 308 (1998).Google Scholar
[6] Ramachandran, V., Smith, A. R., Feenstra, R. M. and Greve, D. W., J. Vac. Sci. Technol. A 17, 1289 (1999).Google Scholar
[7] Chen, H., Feenstra, R. M., Northrup, J. E., Zywietz, T., and Neugebauer, J., Phys. Rev. Lett. 85, 1902 (2000).Google Scholar
[8] Harrison, W. A., Electronic structure and the properties of solids (Freeman, San Francisco, 1980) p 176.Google Scholar
[9] Zywietz, T., Ph.D. Thesis, Technical University of Berlin, 1999.Google Scholar
[10] Tarsa, E. J., Heying, B., Wu, X. H., Fini, P., DenBaars, S. P., and Speck, J. S., J. Appl. Phys. 82, 5472 (1997).Google Scholar
[11] Bättcher, T., Einfeldt, S., Kirchner, V., Figge, S., Heinke, H., Hommel, D., Selke, H., and Ryder, P. L., Appl. Phys. Lett. 73, 3232 (1998).Google Scholar
[12] The argument of the surface always being terminated by at least two layers of metal atoms may not be true under very N rich conditions, since in that case we see a different surface recon- struction (3×3) which may not contain the In adlayer, as discussed in Ref. [4].Google Scholar