Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:22:42.975Z Has data issue: false hasContentIssue false

Indentation Creep Analysis of Amorphous Nitrogen-Containing Carbon Films

Published online by Cambridge University Press:  10 February 2011

Daisuke Tanaka
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Ngaoka Niigata, 940-21 JAPAN
Shigeo Ohshio
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Ngaoka Niigata, 940-21 JAPAN
Hidetoshi Saitoh
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Ngaoka Niigata, 940-21 JAPAN
Get access

Abstract

An indentation creep analysis has been performed to investigate micro-mechanical properties of amorphous nitrogen-containing carbon films. Using results of the slope of the time-displacement relation of creep procedure, the strain rate sensitivity exponent m is obtained. The m value of 0.004 was obtained for diamond-like carbon film without nitrogen. In contrast, those were found to be in the range between 0.009 and 0.101 for nitrogen-containing carbon films. These slightly increased with increasing the nitrogen content of the films. We present results that indicate that the nano-indentation creep technique enables clarification of the nano-structure of nitrogen-containing carbon films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Kamata, K., Inoue, T., Sugai, K., Saitoh, H. and Maruyama, K.: J.Appl. Phys. 78 (1995) 1394.Google Scholar
[2]Maruyaxna, K., Inoue, T., Yamamoto, M., Morinaga, T., Saitoh, H. and Kamata, K.: J.Mater.Sci.Lett. 13 (1994) 1793.Google Scholar
[3]Weissmantel, C.: Thin Films From Free Atoms and particles (Academic, New York, 1985), pp. 153201.Google Scholar
[4]Mori, T. and Namba, Y.: J. Appl. Phys. 55 (1984) 3276.Google Scholar
[5]Lifshitz, Y., Kasi, S.R. and Rabalais, J. W.: Phys. Rev. Lett. 62 (1982) 1290.Google Scholar
[6]Saitoh, H., Inoue, T. and Ohshio, S.: Jpn. J. Appl. Phys., submitted.Google Scholar
[7]Spaepen, F.: Acta Metall. 25 (1977) 407.Google Scholar
[8]Argon, A. S.: Acta Metall. 27 (1979) 47.Google Scholar
[9]Han, W. T. and Tomozawa, M.: J.Am. Ceram. Soc. 73 (1990) 3626.Google Scholar
[10]Kamata, K., Inoue, T., Maruyama, K. and Tanabe, T.: Jpn. J. Appl. Phys. 29 (1990)Google Scholar
[11]Inoue, T., Ohshio, S., Saitoh, H. and Kamata, K.: Appl.Phys.Lett. 67 (1995) 353.Google Scholar
[12]Kaufman, J. H., Metin, S. and Saperstein, D. D.: Phys. Lev. B39 (1989) 5805.Google Scholar
[13]Marsh, D.M.: Proc. R. Soc. London A 282 (1964) 33Google Scholar