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Increasing the Lateral Resolution of Scanning Spreading Resistance Microscopy

Published online by Cambridge University Press:  17 March 2011

R.J. Kline ,
J.F. Richards  and
P.E. Russell
R.J. Kline
Affiliation:
Analytical Instruments Facility, North Carolina State University, Raleigh, NC 27695 Materials Technology Department, Intel Corporation, Santa Clara, CA 95052
J.F. Richards
Affiliation:
Materials Technology Department, Intel Corporation, Santa Clara, CA 95052
P.E. Russell
Affiliation:
Analytical Instruments Facility, North Carolina State University, Raleigh, NC 27695
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Abstract

This paper discusses problems inherent to scanning spreading resistance microscopy (SSRM) and ways to correct them to increase the resolution of two-dimensional dopant profiling. Specifically this paper looks into issues related to the probe-silicon contact and the damaged surface layer created by the sample preparation technique. Degradation of the measured dopant profile was observed when the probe scanned over the nitride spacers. Attempts to reduce the required contact pressures to increase the lifetime and effectiveness of the probes are addressed. The force required for SSRM was successfully reduced after the damage layer was partially removed by isotropic etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B2.4
Copyright
Copyright © Materials Research Society 2000

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